egp30a-egp30k egp30a - egp30k, rev. c ? 2001 fairchild semiconductor corporation egp30a - egp30k fast rectifiers (glass passivated) absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. electrical characteristics t a = 25c unless otherwise noted features ? glass passivated cavity-free junction. ? high surge current capability. ? low leakage current. ? superfast recovery time for high efficiency. ? low forward voltage, high current capability. do-201ad color band denotes cathode thermal characteristics symbol parameter device units 30a 30b 30c 30d 30f 30g 30j 320 v f forward voltage @ 3.0 a 0.95 1.25 1.7 v t rr reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a 50 75 ns i r reverse current @ rated v r t a = 25 c t a = 125 c 5.0 100 a a c t total capacitance v r = 4.0 v, f = 1.0 mhz 95 75 pf symbol parameter value units 30a 30b 30c 30d 30f 30g 30j 320 v r breakdown voltage 50 100 150 200 300 400 600 800 v i f(av) average rectified forward current, .375 " lead length @ t a = 55 c 3.0 a i fsm non-repetitive peak forward surge current 8.3 ms single half-sine-wave 125 a t stg storage temperature range -65 to +150 c t j operating junction temperature -65 to +150 c symbol parameter value units p d power dissipation 6.25 w r ja thermal resistance, junction to ambient 20 c/w r jl thermal resistance, junction to lead 8.5 c/w
egp30a - egp30k, rev. c egp30a-egp30k ? 2001 fairchild semiconductor corporation typical characteristics 0 2 5 50 75 100 125 150 175 0 1 2 3 ambient temperature [oc] average rectified forward current, i f [a] single phase half wave 60hz resistive or inductive load .375" (9.0mm) lead lengths 12 51020 50100 0 25 50 75 100 125 150 175 number of cycles at 60hz peak forward surge current, i fsm [a] 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.01 0.1 1 10 50 forward voltage, v f [v] forward current, i f [a] pulse width = 300 ? s 2% duty cycle t = 25 c o a egp30a-egp30d egp30f-egp30k t = 150 c o a 0.1 1 10 100 1000 0 30 60 90 120 150 180 210 reverse voltage, v r [v] total capacitance, c t [pf] egp30f-egp30k egp30a-egp30d pulse generator (note 2) 50 ? noninductive 50 ? noninductive dut (-) (+) oscilloscope (note 1) 50 ? noninductive 50v (approx) notes: 1. rise time = 7.0 ns max; input impedance = 1.0 megaohm 22 pf. 2. rise time = 10 ns max; source impedance = 50 ohms. reverse recovery time characterstic and test circuit diagram 1.0cm set time base for trr +0.5a 0 -0.25a -1.0a 5/ 10 ns/ cm 0 2 0 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 percent of rated peak reverse voltage [%] reverse current, i r [ma] t = 25 c o a t = 75 c o a t = 125 c o a t = 150 c o a figure 1. forward current derating curve figure 2. non-repetitive surge current figure 3. forward voltage characteristics figure 4. reverse current vs reverse voltage figure 5. total capacitance
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